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Category:1941 births
Category:2006 deaths
Category:Indian Muslims
Category:People from Gorakhpur
Category:Converts to Islam from Hinduism
Category:20th-century Indian historians1. Field of the Invention
The present invention relates to a semiconductor device, and more particularly to a method of forming source/drain of a semiconductor device and a semiconductor device including a recess channel.
2. Description of the Related Art
Recently, with an increase in a degree of integration and a decrease in power supply voltage of semiconductor devices, a threshold voltage of a transistor has been reduced. Reduction of the threshold voltage causes short channel effects to occur. The short channel effects are known to be caused by the expansion of a depletion layer in a channel region. Therefore, in order to reduce the short channel effects, an LDD (Lightly Doped Drain) structure is generally formed. This structure increases a junction depth of a source/drain region to increase a resistance value of the source/drain region. Thus, a resistivity of the source/drain region is reduced to reduce the voltage drop.
However, if the resistance value of the source/drain region is increased to reduce the voltage drop, a resistance value of the drain region becomes large and a substrate resistance value becomes large. This is because the drain region and the substrate have the same conductive type. As a result, a time required for a current to flow from the drain region to the substrate increases, and thus a speed at which a transistor operates decreases.Gap junctional regulation of I(f) current by β-adrenergic stimulation.
In the heart, the major ionic current is the I(f) current. The heart rate can be regulated by a negative chronotropic effect of β-adrenergic stimulation and a positive inotropic effect. Gap junctional regulation of the I(f) current in the atrium has been demonstrated ac619d1d87
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